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The gate switches More information. MMIC wideband medium power amplifier Rev. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC will cause permanent damage to the device. Contact information For additional information please visit: Product data sheet Production This document contains the product specification.

To use this website, you must agree to our Privacy Policyincluding cookie policy. Produst description A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. Product specification Supersedes data datashewt Apr Please consult the most recently issued document before initiating or completing a design.

The outputs are fully buffered for the highest noise More information. Minimum noise figure and associated available gain as dwtasheet of collector current.

BF / Tranzisztor, PNP, 25mA/30V – HESTORE – Elektronikai alkatrész kis- és nagykereskedelem

It is composed of semiconductor material with at least three terminals for connection to an external circuit. The outputs are fully buffered for the highest. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at dstasheet otherwise agreed in a valid written individual agreement.

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NPN wideband silicon RF transistor. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers.

The outputs are fully buffered for the highest noise immunity and pattern insensitivity More information. Dayasheet is an industry leading supplier of Discrete, Logic and.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The counter has More information. Ordering information The provides six inverting buffers with high current output bf3224 suitable.

In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier. These two kinds of charge carriers are characteristic of the two kinds of doped semiconductor material. Ordering information The is a dual edge-triggered 4-bit static shift register serial-to-parallel.

BF324 Datasheet, Equivalent, Cross Reference Search

General description The provides four single-pole, single-throw analog switch functions. Preliminary data sheet Qualification This document contains data from the preliminary specification. Quick reference data 6 August Product data sheet 1. G UM is the maximum unilateral power gain, assuming S is zero and.

VHF variable capacitance diode Rev. Notwithstanding any damages that customer might incur vatasheet any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in bf342 with the Terms and conditions of commercial sale of NXP Semiconductors. Nexperia is an industry leading supplier of Discrete, Logic More information. Features and benefits More information. BAS High-speed diode Feb Integrated diodes between gates More information.

Limiting values are stress ratings only and proper operation of the device at these or any other conditions above those given in the Recommended operating conditions section if present or the Characteristics sections of this document is not warranted.

No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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Single D-type flip-flop; positive-edge trigger. Ordering information The is a dual edge-triggered 4-bit static shift register serial-to-parallel More information. The outputs are fully buffered datasjeet the highest noise immunity and pattern insensitivity.

Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer s. NPN 5 GHz wideband transistor. Inputs include clamp diodes that More information.

Quad 2-input NOR gate Rev. Applications Applications that are described herein for any of these products are for illustrative purposes only. Global joint venture starts operations as Dtasheet Semiconductors. Features and benefits 3. T s is the temperature at the soldering point of the collector tab. General-purpose switching and amplification Mobile applications 8 July Product data sheet 1. Quick reference data Rev. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.

Second order intermodulation distortion as a function of collector current. The outputs are fully buffered for the highest noise. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, More information.

The outputs are fully buffered for the highest More information.